Chemical Mechanical Polishing Conditioner

ABSTRACT

Provided is a chemical mechanical polishing (CMP) conditioner comprising: a substrate comprising a horizontal top surface and multiple abrasive units mounted on the horizontal top surface. Each abrasive unit comprises a base of the abrasive unit, an abrasive layer, and a binding layer. The base of the abrasive unit comprises an upper surface and a lower surface. The abrasive layer is formed on the upper surface and comprises multiple abrasive tips. The binding layer is formed between the lower surface and the substrate, and an inclined plane is formed towards the lower surface. The present invention further provides a method for manufacturing the CMP conditioner. The polishing capabilities of different regions of CMP conditioner can be regulated by the abrasive units. Then the CMP conditioner of the present invention satisfies the requirements in the current industry about different polishing capabilities.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims priority under 35 U.S.C.119(a) from Taiwan Patent Application No. 104117686 filed on Jun. 1,2015, which is hereby specifically incorporated herein by this referencethereto.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a chemical mechanical polishing fieldand more particularly to a chemical mechanical polishing (CMP)conditioner.

2. Description of the Related Art

CMP, being a large area planarization technique, is an important methodfor semiconductor manufacturing. Users can prepare a pad on theplatform, and further add slurry on the surface of the pad. The pad canbe rotated with the platform. The rotating direction of the pad isrelative to a wafer, and the surface of the wafer is polished by thepad. It is beneficial to advance subsequent processes afterplanarization of the wafer. The efficiency of polishing may be preservedby maintaining the roughness of the pad. A hardened layer is formedgradually on the surface of the pad by accumulating the slurry and thescraps produced by wafer during the polishing process. The hardenedlayer decreases the polishing efficiency and shortens the lifetime ofthe pad.

In order to maintain the roughness of the pad, users need a CMPconditioner to dress the surface of the pad continuously during thepolishing process, so as to prolong the life time of the pad. Withenlargement of the wafer size in the semiconductor manufacturing, theinfluences of wafer quality become more obviously from differencebetween the center of the wafer and the outer edge of the wafer. Therequirements of diverse polishing capabilities for different regions ofCMP conditioner increase gradually from the current industry. Similarly,the CMP conditioner needs to have diverse polishing capabilities fordifferent regions.

In view of the abovementioned problem, Taiwan Patent Application No.97110627 discloses a cutting tool for ultra hard material comprising: abase, a plurality of cutting units, and a combining unit. The base is adisc. A through hole is formed in the center of the base. A workingsurface is formed on one side of the base. There are multiple longtroughs disposed on the working surface. The cutting units have cuttingends. Multiple sharp peaks are formed on the cutting ends. The multiplesharp peaks are parallel with one another. Each cutting unit has twosides. The first side is mounted in the long troughs, and the secondside is mounted out of the long troughs. The cutting ends protrude fromthe working surface. The combining unit is binding with the cuttingunits on the base. This patent utilizes the long troughs to change theinclined angle of the cutting tool and then increases the cuttingefficiency. However only the cutting ends of the cutting tool protrudefrom the working surface, and the cutting ends are really smaller thanthe whole cutting unit. In order to change the cutting capability foreach region, users need to regulate the height of each cutting endprotruding from the working surface separately to achieve continuouslydifferent dressing depths. The processes are very complicated and timeconsuming. It is not good for mass production.

Patent publication TW 201029805A1 discloses an apparatus for dressing apolishing pad comprising: a dresser drive shaft which is rotatable andvertically movable, a dresser flange coupled to the dresser drive shaftand configured to secure a dressing member thereto, a spherical bearingprovided in the dresser flange and configured to allow the dressingmember to tilt with respect to the dresser drive shaft, and a springmechanism configured to generate a force against a tilting motion of thedressing member. This patent utilizes the spherical bearing to help thedressing member to be oblique to the dresser drive shaft. The vibrationvertical to the polishing pad of the apparatus from the polishingprocess can be relieved, then decreasing the loading of the apparatus.The problem of this patent is that the inclined angle between thepolishing pad and the dressing member cannot be regulated partiallyduring the polishing process.

Taiwan Patent Application No. 96125259 discloses an apparatus forconditioning a conductive polishing material. The apparatus comprises abacking plane and an annular member. The backing plane is adapted tocouple to a conditioning head assembly. The backing plane comprises arigid disk. The rigid disk has a first side and an opposing second side.The second side has a perpendicular orientation to a centerline of thebacking plate. The annular member has a base portion adhered to thesecond side of the backing plate. The annular member defines aconditioning surface opposite the second side that is radially slopedrelative to a plane of the second side. This patent utilizes the aboveradial oblique to form an inclined plane. In order to constructdifferent heights of the polishing surface, the annular member should beworking repeatedly. The problem of this patent is that workingcomplication and high accuracy of processing are hard to control.

Therefore, the conventional CMP conditioner still needs to be improvedto meet the requirement in the industry.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide a CMP conditionerhaving diverse polishing capabilities on different regions. The presentinvention of the above CMP conditioner can meet the requirements in theindustry.

The present invention provides a CMP conditioner comprising:

a substrate comprising a horizontal top surface; and

multiple abrasive units respectively mounted on the horizontal topsurface; each of the multiple abrasive units comprising: a base of theabrasive unit, an abrasive layer, and a binding layer; the base of theabrasive unit comprising an upper surface and a lower surface, and theupper surface being opposite the lower surface; the abrasive layerformed on the upper surface and comprising multiple abrasive tips; thebinding layer formed between the lower surface and the substrate, and aninclined plane formed towards the lower surface.

The polishing capabilities of different regions of the CMP conditionerin the present invention can be regulated by abrasive units of thehorizontal top surface. Each base of the abrasive unit is oblique to thehorizontal top surface of the substrate by the inclined plane of thebinding layer. The continuously different dressing depths of theabrasive tips may be formed to control the polishing capability for eachabrasive unit when dressing the surface of the polishing pad. The CMPconditioner of the present invention satisfies diverse requirements ofpolishing capabilities in the current industry.

Preferably, each of the multiple abrasive units further comprises a mat.The mat is mounted between the horizontal top surface of the substrateand a side of the lower surface. The binding layer is formed among thelower surface, the mat, and the horizontal top surface. The inclinedplane is formed toward the lower surface.

In addition, the substrate further comprises multiple concave portions.The multiple concave portions are recessed into the horizontal topsurface of the substrate. Each of the multiple concave portionscomprises a bottom surface. Each of the multiple abrasive units furthercomprises a mat. The mat is mounted between the bottom surface of theconcave portion and a side of the lower surface. The binding layer isformed among the lower surface, the mat, and the bottom surface.

Furthermore, the substrate further comprises multiple concave portions.The multiple concave portions are formed through the substrate. The CMPconditioner further comprises a base plate, and the base plate comprisesa surface of the base plate. The surface of the base plate is attachedon the substrate and opposite the horizontal top surface. Each of themultiple abrasive units further comprises a mat. The mat is mountedamong the concave portion, the surface of the base plate, and a side ofthe lower surface. The binding layer is formed between the lower surfaceand the surface of the base plate. The concave portions provide betterfixing effects for the abrasive units. In addition, the distance betweenthe abrasive tip and the horizontal top surface can be controlled bychanging the depth of each of the concave portions.

Preferably, a height of the abrasive tip on one side is higher than aheight of the abrasive tip on the other side. The difference between theheights of the abrasive tips on one side and the other side is largerthan or equal to 3 μm and less than or equal to 50 μm.

Preferably, the substrate comprises a central axis. A normal directionof the horizontal top surface is parallel to the central axis, and thecentral axis is on the center of the horizontal top surface. Theinclined plane faces toward the central axis of the substrate.

In addition, the inclined plane faces away from the central axis of thesubstrate.

Additionally, the inclined planes of the binding layers for a part ofthe multiple abrasive units face toward the central axis of thesubstrate. The inclined planes of the binding layers for another part ofthe multiple abrasive units face away from the central axis of thesubstrate.

Furthermore, the inclined plane faces toward a mat of the adjacentabrasive unit tandemly.

Preferably, the substrate is a stainless steel substrate, a die steelsubstrate, a metal alloy substrate, a ceramic substrate, a plasticsubstrate, or a combination thereof.

Preferably, the thickness of the substrate is larger than or equal to 4mm and less than or equal to 30 mm.

Preferably, materials of the binding layer comprise ceramic materials,brazing materials, plating materials, or polymer materials. Morepreferably, the brazing materials comprise: iron, cobalt, chromium,manganese, silicon, aluminum, or combinations thereof. The polymermaterials comprise: epoxy, polyester resins, polyacrylic acid resins, orphenol formaldehyde resins.

Preferably, the base of the abrasive unit is a conductive base or aninsulated base. More preferably, the conductive base comprises:molybdenum, tungsten, or tungsten carbide.

Preferably, the insulated base comprises ceramic materials. Morepreferably, the ceramic materials comprise silicon carbide. The singlecrystal materials comprise silicon or aluminium oxide.

Preferably, the insulated base comprises single crystal materials. Morepreferably, the single crystal materials comprise silicon, aluminiumoxide, or sapphire.

Preferably, an abrasive membrane is formed on the abrasive layer. Theabrasive membrane comprises a ceramic film or diamond film. The ceramicfilm comprises: aluminium oxide, zirconia, silicon carbide, titaniumnitride, or aluminium-titanium oxide. The diamond film comprises: singlecrystal diamond or polycrystalline diamond.

Preferably, the shortest vertical distance between the top of theabrasive tip and the lower surface is larger than or equal to 2 mm andless than or equal to 10 mm. More preferably, the shortest verticaldistance between the top of the abrasive tip and the lower surface islarger than or equal to 4 mm and less than or equal to 6 mm. The mostpreferably, the shortest vertical distance between the top of theabrasive tip and the lower surface is 4 mm.

Preferably, a shape of the abrasive tip is blade-shaped, conical, arced,cylindrical, pyramidal, or prismatic. More preferably, the prismaticshape is rectangular prism.

Preferably, the tip angle of the abrasive tip is larger than or equal to60° and less than or equal to 120°. More preferably, the tip angle ofthe abrasive tip is 60°, 90°, or 120°.

Preferably, a thickness of the mat is larger than or equal to 3 μm andless than or equal to 50 μm.

Preferably, materials of the mat comprise stainless steel or plastic.

The present invention further provides a CMP conditioner comprising:

providing multiple abrasive units;

providing a substrate comprising a horizontal top surface;

mounting multiple mats on the horizontal top surface;

abutting a side of each abrasive unit against the multiple matsrespectively, and each abrasive unit contacting the horizontal topsurface obliquely; and

forming a binding layer between each abrasive unit and the horizontaltop surface, then obtaining the CMP conditioner.

Preferably, the step of providing multiple abrasive units comprises:

providing multiple bases of the abrasive units; each base of theabrasive units comprising an upper surface and a lower surface, and theupper surface being opposite the lower surface; and

forming an abrasive layer on the upper surface to obtain the abrasiveunits, and the abrasive layer comprising multiple abrasive tips.

Preferably, the steps of abutting a side of each abrasive unit againstthe multiple mats and forming a binding layer comprise:

abutting one side of the lower surface against the multiple matsrespectively, and the other side of the lower surface contacting thehorizontal top surface; then each abrasive unit contacting thehorizontal top surface obliquely; and

forming a binding layer between the lower surface and the horizontal topsurface to obtain the CMP conditioner.

In addition, the step of abutting a side of each abrasive unit againstthe multiple mats comprises:

providing a flat jig comprising a jig surface;

mounting multiple mats on the jig surface;

abutting one side of the abrasive layer against the multiple matsrespectively, and the other side of the abrasive layer contacting thejig surface;

mounting the substrate on the lower surface of each abrasive unithorizontally, then each abrasive unit contacting the horizontal topsurface obliquely; and

wherein the step of forming a binding layer comprises:

forming the binding layer between the lower surface and the horizontaltop surface, then removing the flat jig and the multiple mats; obtainingthe CMP conditioner finally.

Preferably, the vertical distance between the lower surface and thehorizontal top surface is larger than or equal to 3 μm and less than orequal to 50 μm.

Preferably, each of the inclined planes faces toward the central axis ofthe substrate.

In addition, each of the inclined planes faces away from the centralaxis of the substrate.

Additionally, the inclined planes of the binding layers for a part ofthe multiple abrasive units face toward the central axis of thesubstrate. The inclined planes of the binding layers for another part ofthe multiple abrasive units face away from the central axis of thesubstrate.

Preferably, the substrate is a stainless steel substrate, a die steelsubstrate, a metal alloy substrate, a ceramic substrate, a plasticsubstrate, or a combination thereof.

Preferably, the thickness of the substrate is larger than or equal to 4mm and less than or equal to 30 mm.

Preferably, materials of the binding layer comprise ceramic materials,brazing materials, plating materials, or polymer materials. Morepreferably, the brazing materials comprise: iron, cobalt, chromium,manganese, silicon, aluminum, or combinations thereof. The polymermaterials comprise: epoxy, polyester resins, polyacrylic acid resins, orphenol formaldehyde resins.

Preferably, the base of the abrasive unit is a conductive base or aninsulated base. More preferably, the conductive base comprises:molybdenum, tungsten, or tungsten carbide.

Preferably, the insulated base comprises ceramic materials. Morepreferably, the ceramic materials comprise silicon carbide. The singlecrystal materials comprise silicon or aluminium oxide.

Preferably, the insulated base comprises single crystal materials. Morepreferably, the single crystal materials comprise silicon or aluminiumoxide.

Preferably, the shortest vertical distance between the top of theabrasive tip and the lower surface is larger than or equal to 2 mm andless than or equal to 10 mm. More preferably, the shortest verticaldistance between the top of the abrasive tip and the lower surface islarger than or equal to 4 mm and less than or equal to 6 mm. The mostpreferably, the shortest vertical distance between the top of theabrasive tip and the lower surface is 4 mm.

Preferably, a shape of the abrasive tip is blade-shaped, conical, arced,cylindrical, pyramidal, or prismatic. More preferably, the prismaticshape is rectangular prism.

Preferably, the tip angle of the abrasive tip is larger than or equal to60° and less than or equal to 120°. More preferably, the tip angle ofthe abrasive tip is 60 °, 90°, or 120°.

Preferably, a thickness of the mat is larger than or equal to 3 μm andless than or equal to 50 μm.

Preferably, materials of the mat comprise stainless steel or plastic.

The method for manufacturing a CMP conditioner of the present inventionis good for speedy and large-scaled mass production. The polishingcapability of different regions of CMP conditioner can be regulated bythe base of the abrasive units and the abrasive tips. The continuouslydifferent dressing depths are formed on the abrasive tips by thedifferent arrangements of the binding layer. The present invention ofthe above CMP conditioner can meet the requirements in the currentindustry.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a CMP conditioner in accordance withEmbodiment 1 of the present invention;

FIG. 2 is a cross-sectional schematic view of the CMP conditioner inaccordance with Embodiment 1 of the present invention;

FIG. 3 is a perspective view of a CMP conditioner in accordance withEmbodiment 2 of the present invention;

FIG. 4A is a cross-sectional schematic view of the CMP conditioner inaccordance with Embodiment 2 of the present invention;

FIG. 4B is a partial enlarged view of the abrasive unit in accordancewith Embodiment 2 of the present invention;

FIG. 5 is a perspective view of a CMP conditioner in accordance withEmbodiment 3 of the present invention;

FIG. 6 is a cross-sectional schematic view of the CMP conditioner inaccordance with Embodiment 3 of the present invention;

FIG. 7 is a perspective view of a CMP conditioner in accordance withEmbodiment 4 of the present invention;

FIG. 8 is a cross-sectional schematic view of a CMP conditioner inaccordance with Embodiment 5 of the present invention;

FIG. 9 is a cross-sectional schematic view of a CMP conditioner inaccordance with Embodiment 6 of the present invention;

FIG. 10 is a cross-sectional schematic view of a CMP conditioner inaccordance with Embodiment 7 of the present invention; and

FIG. 11 is a cross-sectional schematic view of the CMP conditioner, aflat jig, and multiple mats in accordance with Embodiment 7 of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION Embodiment 1

With reference to FIGS. 1 and 2, a first embodiment of the presentinvention provides a CMP conditioner 1 comprising a substrate 10 and sixabrasive units 20. The substrate 10 is circular. The substrate 10 ismade of stainless steel. The thickness of the substrate 10 is 6 mm. Thesubstrate 10 comprises a horizontal top surface 11 and a central axis. Anormal direction of the horizontal top surface 11 is parallel to thecentral axis, and the central axis is on the center of the horizontaltop surface 11. The abrasive units 20 are mounted on the horizontal topsurface 11, and the abrasive units 20 are arranged around the outer edgeof the horizontal top surface 11 along the central axis at spacedintervals. Each of the six abrasive units 20 comprises a base 21 of theabrasive unit, an abrasive layer 22, a mat 23, and a binding layer 24.The base 21 of the abrasive unit is a conductive base. The base 21 ofthe abrasive unit is made of tungsten carbide. The base 21 of theabrasive unit is circular. The base 21 of the abrasive unit comprises anupper surface and a lower surface. Multiple tips of patterned surfacesare formed on the upper surface by Electrical Discharge Machining (EDM).The abrasive layer 22 is deposited on the patterned surface by ChemicalVapor Deposition (CVD). Multiple abrasive tips 221 are formed throughthe above method. The abrasive layer 22 is consisting of polycrystallinediamond. The crystal size of the polycrystalline diamond is 15 nm. Theshape of each abrasive tip 221 is pyramidal. The tip angle of eachabrasive tip 221 is 60°. The shortest vertical distances d1 between tipsof the abrasive tips 221 and the lower surface are equal. The shortestvertical distance d1 is 4 mm.

The lower surface comprises an abutting side 211 and a mating side 212.The abutting side 211 is opposite the mating side 212. The abutting side211 is abutting against the horizontal top surface 11, and the matingside 212 is in contact with the mat 23. A height of the abrasive tips221 on the mating side 212 is higher than the height of the otherabrasive tips 221 on the abutting side 211. The height difference d2between the abrasive tips 221 on the mating side 212 and the otherabrasive tips 221 on the abutting side 211 is 10 μm.

The mat 23 is a sheet. The mat 23 is made of stainless steel. The mat 23is attached on the horizontal top surface 11. In particular, the mat 23is mounted on the mating side 212 of the base 21 of the abrasive unit.The thickness of the mat 23 is 10 μm.

The binding layer 24 is filled among the lower surface, the horizontaltop surface 11, and the mat 23. The binding layer 24 comprises aninclined plane 241. The inclined plane 241 is formed on the lowersurface and faces to the central axis. The binding layer 24 is made ofiron.

The polishing capability of each region for the CMP conditioner 1 can beregulated by the abrasive units 20 on the horizontal top surface 11.Each base 21 of the abrasive unit is oblique to the horizontal topsurface 11 by the mat 23 and the binding layer 24.The slope of theinclined plane 241 can be regulated by arrangement of the mat 23 and thebinding layer 24. The continuously different dressing depths are formedon the abrasive tips 221 by the above arrangement in the polishingprocess. Users can further change the polishing capability for eachabrasive unit 20.

Embodiment 2

With reference to FIGS. 3, 4A and 4B, a second embodiment of the presentinvention provides a CMP conditioner 1A substantially same as the CMPconditioner 1 of the first embodiment. The difference is that thesubstrate 10A is made of ceramic materials. The thickness of thesubstrate 10A is 10 mm.

The number of the abrasive units 20A is three. The base 21A of theabrasive unit is arc-shaped. The base 21A of the abrasive unit is aninsulated base. The base 21A of the abrasive unit is made of siliconcarbide. The base 21A of the abrasive unit comprises a smooth surface.The abrasive layer 22A is deposited on the smooth surface by CVD.Multiple abrasive tips 221A are formed through the above method. Theshortest vertical distances d1 between a tip of each abrasive tip 221Aand the lower surface is 5 mm. The height difference d2 between theabrasive tips 221A on the mating side 212A and the abrasive tips 221A onthe abutting side 211A is 20 μm.

The mat 23A is made of plastic, and the thickness of the mat 23A is 20μm.

The binding layer 24A is made of epoxy. The inclined plane 241A facesaway from the central axis of the substrate 10A.

The second embodiment of the present invention provides a CMPconditioner 1A that utilizes changing the shape of the base 21A of theabrasive unit and the direction of the inclined plane 241A for thebinding layer 24A to achieve different polishing capabilities from theCMP conditioner 1 of the first embodiment of the present invention.

Embodiment 3

With reference to FIGS. 5 and 6, a third embodiment of the presentinvention provides a CMP conditioner 1B substantially same as the CMPconditioner 1 of the first embodiment. The difference is that the numberof the abrasive units 20B is four. The base 21B of the abrasive units iselongated. The abrasive units 20B are arranged in a cross symbol. Theshape of each abrasive tip 221B is rectangular prism. The tip angle ofeach abrasive tip 221B is 90°. The inclined plane 241B of the partialbinding layer 24B faces to the central axis of the substrate 10B, andthe inclined plane 241B of the other binding layer 24B faces away fromthe central axis of the substrate 10B.

The third embodiment of the present invention provides a CMP conditioner1B that utilizes changing shapes of the abrasive tips 221B and thedirection of the inclined plane 241B for the binding layer 24B toachieve different polishing capabilities from CMP conditioner 1 of thefirst embodiment of the present invention.

The polishing capabilities of each region of the CMP conditioner can beregulated by changing the arrangement and the position of the abrasiveunits, changing the shapes of the base 21B of the abrasive units,changing the longest vertical distance between the lower surface and thehorizontal top surface (slope), changing the shapes of the abrasivetips, or changing the direction of the inclined plane of the bindinglayer for the CMP conditioner of the present invention. The CMPconditioner of the present invention can meet the requirement in theindustry.

The present invention further provides a method for manufacturing a CMPconditioner comprising the following steps:

Firstly, prepare a substrate which comprises a horizontal top surface.Then the multiple mats are attached on the horizontal top surface of thesubstrate.

Prepare multiple bases of the abrasive unit and each base of theabrasive unit comprises an upper surface and a lower surface. The numberof the bases of the abrasive units is equal to the number of the mats.

An abrasive layer is deposited on the upper surface by CVD. The abrasivelayer comprises multiple abrasive tips. The material of the abrasivelayer comprises polycrystalline diamond.

The lower surface comprises two opposite sides. One side is an abuttingside, and the other side is a mating side. The mating side is in contactwith the mat, and the abutting side is abutting against the horizontaltop surface.

In order to obtain the CMP conditioner, fill a binding layer among themat, the lower surface, and the horizontal top surface. An inclinedplane of the binding layer is formed on the lower surface. The bindinglayer is made of epoxy. The method for manufacturing a CMP conditionerof the present invention is very simple. It is good for speedy andlarge-scale mass production. The polishing capability of differentregions of CMP conditioner can be regulated by the base of the abrasiveunits and the abrasive tips. The continuously different dressing depthsare formed on the abrasive tips by the different arrangements of thebinding layer and the mat. The present invention of the above CMPconditioner can meet the requirements in the current industry.

Embodiment 4

With reference to FIG. 7, a fourth embodiment of the present inventionprovides a CMP conditioner 1C substantially same as the CMP conditioner1 of the first embodiment. The difference is that each inclined planefaces to the mat 23C of the next adjacent abrasive unit 20C. In otherwords, directions of the inclined planes are changed along the outeredge of the horizontal top surface 11C.

When the CMP conditioner 1C is used for dressing the surface of thepolishing pad, the directions of the inclined planes are the same withthe rotating direction of the CMP conditioner 1C. The resistance betweenthe CMP conditioner 1C and the polishing pad can be reduced, so as toprolong the life time of the CMP conditioner 1C indirectly.

Embodiment 5

With reference to FIG. 8, a fifth embodiment of the present inventionprovides a CMP conditioner 1D substantially same as the CMP conditioner1 of the first embodiment. The difference is that the substrate 10Dfurther comprises multiple concave portions 12D. The multiple concaveportions 12D are recessed into the horizontal top surface 11D. Themultiple concave portions 12D are arranged around the outer edge of thehorizontal top surface 11D along the central axis at spaced intervals.Each of the multiple concave portions 12D comprises a bottom surface121D. The mat 23D is attached on the bottom surface 121D. The abuttingside 211D abuts against the bottom surface 121D. The mating side 212Dcontacts the mat 23D. The binding layer 24D is filled among the lowersurface, the bottom surface 121D, and the mat 23D.

The fifth embodiment of the present invention provides better fixingeffects for the abrasive units 20D through the multiple concave portions12D.

Embodiment 6

With reference to FIG. 9, a sixth embodiment of the present inventionprovides a CMP conditioner 1E substantially same as the CMP conditioner1 of the first embodiment. The difference is that the substrate 10Efurther comprises multiple concave portions 12E. The multiple concaveportions 12E are formed through the horizontal top surface 11E. Themultiple concave portions 12E are arranged around the outer edge of thehorizontal top surface 11E along the central axis at spaced intervals.The CMP conditioner 1E further comprises a base plate 30E, and the baseplate 30E comprises a surface 31E of the base plate. The surface 31E ofthe base plate is attached on the substrate 10E and the surface 31E ofthe base plate is opposite the horizontal top surface 11E. In thisembodiment, the base plate 30E is fixed on the substrate 10E by multiplescrews 40E. The mat 23E is mounted in the concave portions 12E and themat 23E is attached on the surface 31E of the base plate. The abuttingside 211E abuts against the surface 31E of the base plate. The matingside 212E contacts the mat 23E. The binding layer 24E is filled amongthe lower surface, the base plate 30E, and the mat 23E.

The sixth embodiment of the present invention provides better fixingeffects for the abrasive units 20E through the multiple concave portions12E.

Embodiment 7

With reference to FIG. 10, the present invention further provides a CMPconditioner 1F comprising a substrate 1OF and multiple abrasive units20F. The substrate 10F comprises a horizontal top surface 11F. Themultiple abrasive units 20F are mounted on the horizontal top surface11F. Each of the abrasive units 20F comprises a base 21F of the abrasiveunit, an abrasive layer 22F, and a binding layer 24F. The base 21F ofthe abrasive unit comprises an upper surface and a lower surface, andthe upper surface is opposite the lower surface. The abrasive layer 22Fis formed on the upper surface. The abrasive layer 22F comprisesmultiple abrasive tips 221F. The binding layer 24F is formed between thelower surface and the horizontal top surface 11F. An inclined plane 241Fis formed on the binding layer 24F, and the inclined plane 241F faces tothe lower surface.

With reference to FIG. 11, the present invention further provides amethod for manufacturing a CMP conditioner 1F comprising the followingsteps:

First of all, prepare a flat jig 50F which comprises a jig surface 51F.Then the multiple mats 23F are attached on the jig surface 51F.

Prepare multiple bases 21F of the abrasive unit, each base 21F of theabrasive unit comprising an upper surface and a lower surface. Thenumber of the bases 21F of the abrasive unit is equal to the number ofthe mats 23F.

The abrasive layer 22F is deposited on the upper surface by CVD. Theabrasive layer 22F comprises multiple abrasive tips 221F. The materialof the abrasive layer 22F comprises polycrystalline diamond.

One side of the abrasive layer 22F abuts against the mat 23F, and theother side of the abrasive layer 22F abuts against the jig surface 51F.The lower surface is oblique.

Then prepare the substrate 10F which comprises a horizontal top surface11F. The horizontal top surface 11F abuts a side of the lower surface.The substrate 10F is parallel to the flat jig 50F.

In order to obtain the CMP conditioner 1F, remove the flat jig 50F andthe mats 23F after filling the binding layer 24F between the substrate10F and the lower surface. The inclined plane 241F of the binding layer24F is formed on the lower surface. The binding layer 24F is made ofepoxy.

The method for manufacturing a CMP conditioner of the present inventionis very simple. It is good for speedy and large-scale production. Thepolishing capabilities of different regions of CMP conditioner can beregulated by the base of the abrasive units and the abrasive tips. Thecontinuously different dressing depths are formed on the abrasive tipsby the different arrangements of the binding layer. The above CMPconditioner of the present invention can meet the requirements in thecurrent industry.

What is claimed is:
 1. A chemical mechanical polishing (CMP) conditionercomprising: a substrate comprising a horizontal top surface; andmultiple abrasive units respectively mounted on the horizontal topsurface; each of the multiple abrasive units comprising: a base of theabrasive unit; an abrasive layer; and a binding layer; the base of theabrasive unit comprising an upper surface and a lower surface; the uppersurface being opposite the lower surface; the abrasive layer formed onthe upper surface and comprising multiple abrasive tips; the bindinglayer formed between the lower surface and the substrate, and aninclined plane formed towards the lower surface.
 2. The CMP conditioneras claimed in claim 1, wherein each of the multiple abrasive unitscomprises a mat; the mat is mounted between the horizontal top surfaceof the substrate and a side of the lower surface; the binding layer isformed among the lower surface, the mat, and the horizontal top surface;the inclined plane is formed towards the lower surface.
 3. The CMPconditioner as claimed in claim 1, wherein the substrate comprisesmultiple concave portions; the multiple concave portions are recessedinto the horizontal top surface of the substrate; each of the multipleconcave portions comprises a bottom surface; each of the multipleabrasive units comprises a mat; the mat is mounted between the bottomsurface of the concave portion and a side of the lower surface; thebinding layer is formed among the lower surface, the mat, and the bottomsurface.
 4. The CMP conditioner as claimed in claim 1, wherein thesubstrate comprises multiple concave portions; the multiple concaveportions are formed through the substrate; the CMP conditioner comprisesa base plate, and the base plate comprises a surface of the base plate;the surface of the base plate is attached on the substrate and thesurface of the base plate is opposite the horizontal top surface; eachof the multiple abrasive units comprises a mat; the mat is mounted amongthe concave portion, the surface of the base plate, and a side of thelower surface; the binding layer is formed between the lower surface andthe surface of the base plate.
 5. The CMP conditioner as claimed inclaim 1, wherein a height of the abrasive tip on one side is higher thana height of the abrasive tip on the other side; the difference betweenthe heights of the abrasive tip on one side and the other side is largerthan or equal to 3 μm and less than or equal to 50 μm.
 6. The CMPconditioner as claimed in claim 1, wherein the inclined plane facestoward a central axis of the substrate.
 7. The CMP conditioner asclaimed in claim 1, wherein the inclined plane faces away from a centralaxis of the substrate.
 8. The CMP conditioner as claimed in claim 1,wherein the inclined planes of the binding layers for a part of themultiple abrasive units face toward a central axis of the substrate; theinclined planes of the binding layers for another part of the multipleabrasive units face away from the central axis of the substrate.
 9. TheCMP conditioner as claimed in claim 2, wherein the inclined plane facestoward the mat of the adjacent abrasive unit tandemly.
 10. The CMPconditioner as claimed in claim 1, wherein the substrate is a stainlesssteel substrate, a die steel substrate, a metal alloy substrate, aceramic substrate, a plastic substrate, or a combination thereof. 11.The CMP conditioner as claimed in claim 1, wherein the thickness of thesubstrate is larger than or equal to 4 mm and less than or equal to 30mm.
 12. The CMP conditioner as claimed in claim 1, wherein materials ofthe binding layer comprise ceramic materials, brazing materials, platingmaterials, or polymer materials.
 13. The CMP conditioner as claimed inclaim 1, wherein the base of the abrasive unit is a conductive base oran insulated base; the conductive base comprises molybdenum, tungsten,or tungsten carbide; the insulated base comprises ceramic materials orsingle crystal materials; the ceramic materials comprise siliconcarbide, and the single crystal materials comprise silicon, aluminiumoxide, or sapphire.
 14. The CMP conditioner as claimed in claim 1,wherein an abrasive membrane is formed on the abrasive layer; theabrasive membrane comprises a ceramic film or a diamond film.
 15. TheCMP conditioner as claimed in claim 13, wherein the shortest verticaldistance between the top of the abrasive tip and the lower surface islarger than or equal to 2 mm and less than or equal to 10 mm.
 16. TheCMP conditioner as claimed in claim 1, wherein a shape of the abrasivetip is blade-shaped, conical, arced, cylindrical, pyramidal, orprismatic.
 17. The CMP conditioner as claimed in claim 2, wherein athickness of the mat is larger than or equal to 3 μm and less than orequal to 50 μm.
 18. The CMP conditioner as claimed in claim 2, whereinmaterials of the mat comprise stainless steel or plastic.
 19. A methodfor manufacturing a CMP conditioner comprising: providing multipleabrasive units; providing a substrate comprising a horizontal topsurface; mounting multiple mats on the horizontal top surface; abuttinga side of each abrasive unit against the multiple mats respectively, andeach abrasive unit contacting the horizontal top surface obliquely; andforming a binding layer between each abrasive unit and the horizontaltop surface, then obtaining the CMP conditioner.
 20. The method formanufacturing a CMP conditioner as claimed in claim 19, wherein the stepof providing multiple abrasive units comprises: providing multiple basesof the abrasive units; each base of the abrasive units comprises anupper surface and a lower surface, and the upper surface is opposite thelower surface; and forming an abrasive layer on the upper surface toobtain the abrasive units, and the abrasive layer comprising multipleabrasive tips.
 21. The method for manufacturing a CMP conditioner asclaimed in claim 20, wherein the steps of abutting a side of eachabrasive unit against the multiple mats and forming a binding layercomprise: abutting one side of the lower surface against the multiplemats respectively, and the other side of the lower surface contactingthe horizontal top surface; then each abrasive unit contacting thehorizontal top surface obliquely; and forming the binding layer betweenthe lower surface and the horizontal top surface to obtain the CMPconditioner.
 22. The method for manufacturing a CMP conditioner asclaimed in claim 20, wherein the step of abutting a side of eachabrasive unit against the multiple mats comprises: providing a flat jigcomprising a jig surface; mounting multiple mats on the jig surface;abutting one side of the abrasive layer against the multiple matsrespectively, and the other side of the abrasive layer contacting thejig surface; mounting the substrate on the lower surface of eachabrasive unit horizontally, then each abrasive unit contacting thehorizontal top surface obliquely; and wherein the step of forming abinding layer comprises: forming the binding layer between the lowersurface and the horizontal top surface, then removing the flat jig andthe multiple mats; obtaining the CMP conditioner finally.